S8193 Si photodiode Hamamatsu， S8193 Si photodiode Hamamatsu MADE IN JAPAN. Check more details at Hamamatsu Photonics official website here.
Detector for X-ray monitors
Features
-High sensitivity, high reliability photodiode with ceramic scintillator
-High X-ray sensitivity: 1.8 times that of CWO
-Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
-Unlike CsI, has no deliquescence
Photosensitive area：5.8×5.8 mm
Number of elements：1
Package：Ceramic
Cooling：Non-cooled
Reverse voltage (max.)：5 V
Dark current (max.)：50 pA
Terminal capacitance (typ.)：950 pF
See more details at the Datasheet
l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, ms l Unlike CsI, has no deliquescence
Features
Applications
Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Symbol ID Ct Condition Min. Typ. 55
s X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm)
X-ray tube voltage 120 keV Note) Depends on equipment and measurement conditions.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
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