{"id":2481,"date":"2023-05-26T01:10:57","date_gmt":"2023-05-26T01:10:57","guid":{"rendered":"https:\/\/beamq.com\/laser\/?p=2481"},"modified":"2023-05-26T01:10:57","modified_gmt":"2023-05-26T01:10:57","slug":"gainp-gainasp-red-semiconductor-laser-epitaxial-wafer","status":"publish","type":"post","link":"https:\/\/beamq.com\/laser\/gainp-gainasp-red-semiconductor-laser-epitaxial-wafer\/","title":{"rendered":"GaInP\/GaInAsP red semiconductor laser epitaxial wafer"},"content":{"rendered":"\n<p><a href=\"https:\/\/www.beamq.com\/gainpgainasp-red-semiconductor-laser-epitaxial-wafer-p-2557.html\">GaInP\/GaInAsP red semiconductor laser epitaxial wafer<\/a><\/p>\n\n\n\n<p>Epitaxial wafers of custom sizes and thicknesses are available.<br>Some parameters can be customized according to customer requirements.<\/p>\n\n\n\n<p>3\/4inch diameter<br>Thickness 450\u00b125um\u2460<br>PL wavelength 780-860nm<br>surface orientation<br>(100) 15\u00b0Off Toward<br>Positioning Edge Standard US<br>Substrate EPD &lt;500 cm-2<\/p>\n\n\n\n<p>Name Material Thickness Doping Concentration (cm-3)<\/p>\n\n\n\n<p>Ohmic contact layer GaAs 2000~3000 >1E+19<br>Band gap transition layer GaInP 200~500 1~5E+18<br>P confinement layer AlGaInP 9000~11000 1~2E+18<br>Waveguide layer GaInP 3000~6000 &#8211;<br>Active region InGaAsP ~100 &#8211;<br>Waveguide layer GaInP 3000~6000 &#8211;<br>N confinement layer AlGaInP 9000~11000 0.5~1E+18<br>Transition layer GaAs ~3000 1~4E+18<\/p>\n\n\n\n<figure class=\"wp-block-image size-large\"><img loading=\"lazy\" width=\"444\" height=\"444\" src=\"https:\/\/beamq.com\/laser\/wp-content\/uploads\/2023\/05\/GaInP-GaInAsP-red-semiconductor-laser-epitaxial-wafer.jpg\" alt=\"\" class=\"wp-image-2482\"\/><\/figure>\n","protected":false},"excerpt":{"rendered":"<p>GaInP\/GaInAsP red semiconductor laser epitaxial wafer Epitaxial wafers of custom sizes and thicknesses are available.Some parameters can be customized according to customer requirements. 3\/4inch diameterThickness 450\u00b125um\u2460PL wavelength 780-860nmsurface orientation(100) 15\u00b0Off TowardPositioning Edge Standard USSubstrate EPD &lt;500 cm-2 Name Material Thickness Doping Concentration (cm-3) Ohmic contact layer GaAs 2000~3000 >1E+19Band gap transition layer GaInP 200~500 1~5E+18P [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2482,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[1],"tags":[182],"_links":{"self":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts\/2481"}],"collection":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/comments?post=2481"}],"version-history":[{"count":1,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts\/2481\/revisions"}],"predecessor-version":[{"id":2483,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts\/2481\/revisions\/2483"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/media\/2482"}],"wp:attachment":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/media?parent=2481"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/categories?post=2481"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/tags?post=2481"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}