{"id":4969,"date":"2024-07-05T00:27:19","date_gmt":"2024-07-05T00:27:19","guid":{"rendered":"https:\/\/beamq.com\/laser\/?p=4969"},"modified":"2024-07-05T00:32:24","modified_gmt":"2024-07-05T00:32:24","slug":"850nm-ir-apd-avalanche-photodiode-rosa","status":"publish","type":"post","link":"https:\/\/beamq.com\/laser\/850nm-ir-apd-avalanche-photodiode-rosa\/","title":{"rendered":"850nm IR APD Avalanche Photodiode ROSA"},"content":{"rendered":"\n

850nm IR APD Avalanche Photodiode ROSA<\/a><\/strong>. APD ( avalanche photodiode ) is a highly sensitive type of photodiode, which in general are semiconductor diodes that exploit the photoelectric effect to convert light into electricity. APDs use materials and a structure optimised for operating with high reverse bias, approaching the reverse breakdown voltage, such that charge carriers generated by the photoelectric effect are multiplied by an avalanche breakdown; thus they can be used to detect relatively small amounts of light.<\/p>\n\n\n\n

Key Features:<\/p>\n\n\n\n

Long wavelength operation
3 pin TO package
Low dark current
Excellent reliability compliance to GR-468-CORE
Compliance to RoHS standard<\/p>\n\n\n\n

Applications:<\/p>\n\n\n\n

RADAR
Laser range finder
Laser alarming<\/p>\n\n\n\n

Download the Datasheet of 850nm IR APD Avalanche Photodiode ROSA.<\/p>\n\n\n\n

850nm-IR-APD-Avalanche-Photodiode-ROSA<\/a>Download<\/a><\/div>\n\n\n\n

Parameter Symbol Min. Max. Unit
Forward current IF 1 mA
Reverse voltage VR 0.9\u00d7VBR V
Storage Temperature Ts -45 +100 \u2103
Operating Temperature Top -45 +85 \u2103
Optical Wavelength \u03bb – 400 – 1100 nm
Breakdown Voltage Vbr Tc=25\u2103 Id=10uA, 80 – 200 V
Dark Current Id Tc=25\u2103 ,M=100 – 0.3 2.0 nA
Responsivity Re \u03bb=850nm, VR=0.9\u00d7VBR 40 50 – A\/W
Total capacitance Ctot M=100,f=1MHz – 2.0 4.0 pF<\/p>\n\n\n\n

\"\"<\/figure>\n","protected":false},"excerpt":{"rendered":"

850nm IR APD Avalanche Photodiode ROSA. APD ( avalanche photodiode ) is a highly sensitive type of photodiode, which in general are semiconductor diodes that exploit the photoelectric effect to convert light into electricity. APDs use materials and a structure optimised for operating with high reverse bias, approaching the reverse breakdown voltage, such that charge […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[1],"tags":[],"_links":{"self":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts\/4969"}],"collection":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/comments?post=4969"}],"version-history":[{"count":3,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts\/4969\/revisions"}],"predecessor-version":[{"id":4974,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/posts\/4969\/revisions\/4974"}],"wp:attachment":[{"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/media?parent=4969"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/categories?post=4969"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/beamq.com\/laser\/wp-json\/wp\/v2\/tags?post=4969"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}