1444nm infrared semiconductor laser 300~1000mW
Small size, long life, low power consumption, simple operation
It is suitable for scientific experiments, optical instruments, optical sensors, measurement, communication, spectral analysis, etc.
Wavelength (nm)：1444
Warm-up Time (minutes)：<10
Working Mode：CW
Aperture Position (mm)：50
Output Power (mW)：>300,...1000
Operation Temperature (℃)：10~35
Power Stability(rms, over 4 hours)：<2%, <3%, <5%
Dimensions (L×W×H, mm)：205 x 60 x 65
Transverse：TEM00
External Modulation：VD-VIB
Beam Quality (M2 factor):<1.5
Expected Lifetime (hours)：10000
Beam Diameter at Aperture (mm)：~1.5
Warranty Time：1 year
Download the Datasheet
