It is designed for high speed, high performance optical communication applications as well as 5G networking applications. Used 175um cavity length to optimize over temperature performances and better reliability.
Contact us if you need to place an wholesale order .
Download the datasheet for DFB Laser Diode Chips
OUTLINE DIMENSIONS
Laser emission (front)
Chip configuration:
* Chip thickness is 110 (+/-15) um
* Laser cavity is typical 175 um.
* Chip size is 175x250 (+/-15) um.
ABSOLUTE MAXIMUM RATINGS
|
Parameter
|
Symbol
|
Conditions
|
Min.
|
Max.
|
Unit
|
|
Operating Temperature
|
Top
|
---
|
-0
|
+70
|
°C
|
|
Storage Temperature
|
TStorage
|
---
|
-40
|
+85
|
°C
|
|
Solder Reflow Temperature
|
STEM
|
10sec Max.
|
---
|
260
|
°C
|
|
Light Output Power
|
Po
|
CW
|
---
|
10
|
mW
|
|
Laser Reverse Voltage
|
Vr
|
---
|
---
|
2
|
V
|
|
Forward Current Transient (LD)
|
If
|
---
|
---0
|
100
|
mA
|
Note 1:0
Recommended burn-in conditions:100C, 85mA, 48 hours, and judgment criteria is +/- 10% change of key parameters.
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tc=25°C, unless noted)
|
Parameter
|
Symbol
|
Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
Threshold Current
|
Ith
|
CW, Tc = 25°C
CW, Tc = 85°C
|
---
|
11
25
|
15
30
|
mA
|
|
Forward Voltage
|
Vf
|
CW, Iop = Ith+30mA
|
---
|
1.25
|
1.35
|
V
|
|
Series Resistance
|
Rs
|
CW, Iop = Ith+30mA
|
---
|
7
|
15
|
Ohm
|
|
Slope Efficiency
|
SE
|
CW, Iop = Ith+30mA
|
0.20
|
0.4
|
0.5
|
mW/mA
|
|
Side Mode Suppression Ratio
|
SMSR
|
CW, Iop = Ith+30mA,
Tc= -40°C ~ +85°C
|
35
|
43
|
---
|
dB
|
|
Central Wavelength and Wavelength Span
|
λ
|
CW, Iop=Ith+30mA,
Tc= 0°C ~ +70°C
|
λ-10
|
λ
|
λ+10
|
nm
|
|
Peak Wavelength
|
λ
|
CW, Iop=Ith+30mA,
Tc= 25°C
|
λ-4.0
|
λ
|
λ+2.0
|
nm
|
|
Wavelength Temperature Coefficient
|
Dλ/ DT
|
Top = 0°C ~ +85°C
|
---
|
0.12
|
---
|
nm/°C
|
|
Beam Divergence ^
|
(q^)
|
CW, Po = 5Mw
|
---
|
32
|
---
|
degree
|
|
Beam Divergence //
|
(q//)
|
CW, Po = 5mW
|
---
|
22
|
---
|
degree
|
|
Bandwidth
|
BW
|
Iop= 60mA, Tc= 25°C
|
---
|
18
|
---
|
GHz
|
|
Rise/Fall Time (20%~80%)
|
tr/tf
|
Iop = Ith+30mA, Top=25C
20% ~ 80%
|
---
|
23
|
|
ps
|
