420nm 5.6mm 50mW Laser Diodes, typically wavelength 420nm - 460nm.
420nm, 45mW TO-Can, AR-Coated Laser Diode, NDVA416T from Nichia
400-430 nm Peak Output Wavelength
AR-Coated Front Facet
45 mW Output Power
5.6 mm TO-Can Type
Simulation and Optimization of 420 nm InGaN/GaN Laser Diodes
Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/ In0.05Ga0.95N (6 nm) multiple quantum wells, by employing transmission electron microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from the cross-sectional direction. It was found that the contrast of light and shade in the well layers corresponds to the difference in In composition. The main radiative recombination was attributed to excitons localized at deep traps which probably originate from the In-rich region in the wells acting as quantum dots. Photopumped lasing was observed at the high energy side of the main spontaneous emission bands