Si photodiode S1227-66BR hamamatsu
For UV to visible, precision photometry; suppressed IR sensitivity
Features
- Resin potting type
- Suppressed IR sensitivity
- Low dark current
Photosensitive area 5.8x5.8 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 340 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.43 A/W
Dark current (max.) 20 pA
Rise time (typ.) 2 us
Terminal capacitance (typ.) 950 pF
Noise equivalent power (typ.) 4.2x10-15 W/Hz1/2
Si photodiode S1227-66BR hamamatsu