hamamatsu Si photodiode S1337-1010BR
For UV to IR, precision photometry
Features
-Low capacitance
Photosensitive area 10x10 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.62 A/W
Dark current (max.) 200 pA
Rise time (typ.) 3 us
Terminal capacitance (typ.) 1100 pF
Noise equivalent power (typ.) 1.5x10-14 W/Hz1/2
hamamatsu Si photodiode S1337-1010BR